Schedule
Section 1: Fabrication and growth control of Group-IV nanostructures
Section 2: Characterization and analysis of nano-Si, Ge and Graphene, CNT
Section 3: Advanced device application based on Nano-IV materials
Date |
Time |
Title |
Speaker |
Nov.7 |
9:00- 9:20 |
Opening Ceremony (Chair:
Prof. Y. SHI) |
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Session I (Chair: Prof. Shunri
ODA) |
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9:20- 9:55 |
Developments
and applications of Mueller polarimetry |
Bernard
DREVILLON |
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9:55-10:30 |
Artificial
Silicon Photonic Atoms and Photonic Molecules |
Kunji
CHEN |
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10:30-10:45 |
Coffee Break |
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Session II (Chair: Prof. Yvan
BONNASSIEUX) |
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10:45-11:20 |
Low-temperature
epitaxy of Ge and Si by
RF-PECVD |
Joaquim
NASSAR |
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11:20-11:55 |
Si/Genanomaterials for clean energy applications |
Chuanbo
LI |
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11:55-14:00 |
Lunch |
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Session III (Chair: Prof. Kunji CHEN ) |
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14:00-14:35 |
NeoSilicon
based nanoelectromechanical information devices |
Shunri
ODA |
|
14:35-15:10 |
Physical
and behavioural model for organic diodes and
organic photovoltaic cells |
Yvan
BONNASSIEUX |
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15:10-15:45 |
Growth
and Characteristics of microcrystalline silicon films deposited using
jet-ICPCVD and hydrogen plasma treatment |
Yi
SHI |
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15:45-16:00 |
Coffee Break |
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Session IV (Chair: Prof. Joaquim NASSAR ) |
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16:00-16:35 |
Silicon
nanocrystals: impurity effect and photovoltaic
application |
Deren
YANG |
|
16:35-17:10 |
Recent
effort on nanocrystal charge trapping nonvolatile
memories |
Jianlin
LIU |
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17:10-17:45 |
Opportunity
of in-plane Silicon Nanowires for High Performance Flexible Electronics |
Linwei
YU |
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18:15 |
Banquet |
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